Geely Technology’s subsidiary, Zhejiang Jingneng Microelectronics, recently announced the successful production of its first automotive-grade IGBT product developed through independent design and research. The new chip’s various parameters meet the design requirements.
This IGBT chip uses the seventh-generation micro-trench gate and field stop technology. By optimizing the surface structure and FS structure, it has both short-circuit tolerance and lower conduction/switching losses, increasing power density by about 35%, and its comprehensive performance indicators have reached an industry-leading level. Jingneng is deeply integrated with wafer foundries and continuously improves chip performance through process collaboration.
Jingneng stated that a typical electric vehicle uses over 1,200 chips, and power semiconductors account for nearly one-fourth of them. The company will continuously develop high-performance chips and module products around the development needs of the powertrain system.
IGBT is the dominant device in modern power electronics and is known as the CPU of the power electronics industry. Recently, industry developers have discussed packaging Si IGBT and SiC MOS together to form a hybrid parallel module solution. In the future, innovative application scenarios for power chips and modules will become more abundant.
Jingneng Microelectronics is a power semiconductor company incubated by Geely Technology Group. It focuses on the development and innovation of Si IGBT&SiC MOS, and exerts its comprehensive capabilities of “chip design + module manufacturing + automotive certification” to provide customers in EVs, electric motorcycles, photovoltaics, energy storage, new energy ships, and other fields with superior performance power products and services.